AON2803 20v dual p-channel mosfet general description product summary v ds i d (at v gs =-4.5v) -3.8a r ds(on) (at v gs =-4.5v) < 70m w r ds(on) (at v gs =-2.5v) < 90m w r ds(on) (at v gs =-1.8v) < 115m w symbol the AON2803 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltage as low as 1.8v. this device is su itable for use as a load switch or in pwm applications. units parameter absolute maximum ratings t a =25c unless otherwise noted maximum -20v g1 d1 s1 g2 d2 s2 dfn 2x2 package top bottom s1 g1 d2 s2 d1 g2 pin 1 pin 1 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state t 10s steady-state c/w maximum junction-to-ambient b 175 235 c/w maximum junction-to-ambient b r q ja 120 155 c/w maximum junction-to-ambient a 85 maximum junction-to-ambient a c/w r q ja 35 65 45 v units parameter maximum v gate-source voltage drain-source voltage -20 8 continuous drain current t a =25c junction and storage temperature range power dissipation a p d t a =70c t a =25c t a =70c 0.95 -55 to 150 pulsed drain current c units parameter typ max c thermal characteristics a w -20 1.5 i d -3.8 -3 rev 0: august 2012 www.aosmd.com page 1 of 5 free datasheet http:///
AON2803 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.4 -0.6 -1 v i d(on) -20 a 58 70 t j =125c 78 94 70 90 m w 85 115 m w g fs 15 s v sd -0.66 -1 v i s -2 a c iss 560 pf c oss 80 pf c rss 70 pf r g 15 30 w q g 8.5 12 nc q gs 1.2 nc q gd 2.1 nc t d(on) 7.2 ns t 36 ns drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-3.8a forward transconductance diode forward voltage switching parameters i s =-1a,v gs =0v v ds =-5v, i d =-3.8a gate resistance v gs =0v, v ds =0v, f=1mhz reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) static drain-source on-resistance i dss m a v ds =v gs, i d =-250 m a v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current m w v gs =-1.8v, i d =-2a v gs =-2.5v, i d =-3a maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =-4.5v, v =-10v, r =2.6 w , v gs =-4.5v, v ds =-10v, i d =-3.8a gate source charge gate drain charge total gate charge t r 36 ns t d(off) 53 ns t f 56 ns t rr 37 ns q rr 27 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-3.8a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =2.6 w , r gen =3 w turn-off fall time i f =-3.8a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. b. the value of r q ja is measured with the device mounted on a minimum pa d board. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. c. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. rev 0: august 2012 www.aosmd.com page 2 of 5 free datasheet http:///
AON2803 typical electrical and thermal characteristics 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-1.5v -2.0v -2.5v -4.5v -3.0v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =-5v 40 60 80 100 120 140 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on - resistance vs. drain current and gate v gs =-2.5v v gs =-4.5v v gs =-1.8v 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =-2.5v i d =-3a v gs =-4.5v i d =-3.8a v gs =-1.8v i d =-2a figure 3: on - resistance vs. drain current and gate voltage figure 4: on - resistance vs. junction temperature 20 60 100 140 180 0 2 4 6 8 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-3.8a 25 c 125 c 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c rev 0: august 2012 www.aosmd.com page 3 of 5 free datasheet http:///
AON2803 typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 -v gs (volts) -q g (nc) figure 7: gate-charge characteristics v ds =-10v i d =-3.8a 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 1 10 100 1000 10000 1e-06 0.0001 0.01 1 100 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t j(max) =150 c t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =85 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d figure 10: single pulse power rating junction - to - ambient (note e) figure 9: maximum forward biased safe operating area (note e) rev 0: august 2012 www.aosmd.com page 4 of 5 free datasheet http:///
AON2803 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v dut l vgs diode recovery test circuit & waveforms vds - vds + rr q = - idt t rr -isd -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) ig vgs - + vdc l isd vds - di/dt rm vdd vdd t rr -isd -vds f -i -i rev 0: august 2012 www.aosmd.com page 5 of 5 free datasheet http:///
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